Infineon BSC037N08NS5: A Comprehensive Technical Overview of the 80 V OptiMOS Power MOSFET
The relentless pursuit of higher efficiency, power density, and reliability in power electronics has made the MOSFET a cornerstone of modern design. Among the plethora of options available, Infineon Technologies' BSC037N08NS5 stands out as a prime example of advanced silicon-based performance. This device, part of the esteemed OptiMOS™ 5 80 V family, is engineered to set new benchmarks in power conversion applications.
At its core, the BSC037N08NS5 is an N-channel power MOSFET built on Infineon’s state-of-the-art superjunction (SJ) technology. This architecture is the key to its exceptional performance, enabling a remarkable reduction in on-state resistance while simultaneously minimizing switching losses and gate charge. The device is housed in a PG-TDSON-8 (SuperSO8) package, which offers an excellent trade-off between compact size and superior thermal and electrical performance, making it ideal for space-constrained applications.
The primary electrical characteristics define its capabilities. The BSC037N08NS5 boasts a maximum drain-source voltage (VDS) of 80 V, making it perfectly suited for a wide range of industrial and automotive environments, including 48 V boardnet systems. Its most striking feature is an ultra-low on-state resistance (RDS(on)) of just 3.7 mΩ (max) at 10 V VGS. This exceptionally low resistance is the primary contributor to minimizing conduction losses, which directly translates into higher efficiency and reduced heat generation.
Furthermore, the device exhibits outstanding switching characteristics. The low gate charge (QG) and figures of merit like RDS(on) QG ensure rapid switching transitions. This is critical for high-frequency switch-mode power supplies (SMPS), where switching losses can dominate overall system inefficiency. The low effective output capacitance (Eoss) further enhances its performance in hard-switching topologies, reducing the energy dissipated during each switching cycle.
The robustness of the BSC037N08NS5 is another highlight. It features a high avalanche ruggedness and an extended reverse bias safe operating area (RBSOA), providing designers with a significant safety margin against voltage spikes and transients commonly encountered in harsh electrical environments. Its qualified AEC-Q101 grade also confirms its suitability for demanding automotive applications, ensuring reliability under extreme operating conditions.
Typical applications that benefit from this MOSFET’s performance profile include:
High-current DC-DC converters in servers and telecom infrastructure.
Motor control and drive systems in industrial automation.
48 V to 12 V conversion in mild-hybrid vehicles (MHEVs).
High-frequency power supplies and inverters.
ICGOOODFIND: The Infineon BSC037N08NS5 exemplifies the pinnacle of power MOSFET design, offering an unparalleled combination of ultra-low RDS(on), superior switching performance, and high robustness in a compact package. It is a top-tier choice for engineers aiming to push the limits of efficiency and power density in modern 48 V systems and beyond.
Keywords: OptiMOS™ 5, Ultra-low RDS(on), 80 V Power MOSFET, Superjunction Technology, AEC-Q101.
