**HMC440QS16GETR: A 6 GHz to 12 GHz GaAs pHEMT MMIC Medium Power Amplifier**

The **HMC440QS16GETR** represents a significant advancement in microwave amplification technology, specifically engineered for demanding applications across the **6 GHz to 12 GHz frequency band**. This monolithic microwave integrated circuit (MMIC) is fabricated using a high-performance **GaAs pHEMT** (Gallium Arsenide pseudomorphic High Electron Mobility Transistor) process, which provides an exceptional blend of power, efficiency, and broadband performance in a compact form factor.

A key strength of this amplifier is its robust **medium power output capability**. It delivers a typical output power of **+24 dBm**, making it an ideal solution for driving the final power amplifier stage in a transmitter chain or serving as a high-gain block in receiver systems. The device achieves a high **small-signal gain of 22 dB**, ensuring that even weak input signals are amplified sufficiently for further processing. Furthermore, it maintains an impressive **output IP3 of +33 dBm**, a critical figure of merit that underscores its excellent linearity and ability to handle complex modulation schemes without generating significant intermodulation distortion.

The HMC440QS16GETR is designed for ease of integration into a wide array of systems. Its **single positive supply voltage** operation, ranging from +5V, simplifies power supply design. The inclusion of an integrated bias sequencer and active bias control enhances reliability and protects the device against over-current conditions. Housed in a compact, RoHS-compliant **QSOP-16 surface-mount package**, it is suitable for high-volume automated assembly processes, catering to the needs of modern radar systems, electronic warfare (EW) suites, satellite communications, and test and measurement equipment where size, weight, and power (SWaP) are critical constraints.

**ICGOOODFIND:** The HMC440QS16GETR stands out as a superior **broadband power amplifier** due to its high linearity, substantial gain, and reliable performance across the entire Ku-band and portions of the C and X bands. Its robust pHEMT design and integrated features make it a versatile and dependable component for advanced RF and microwave systems.

**Keywords:** GaAs pHEMT, Medium Power Amplifier, Broadband, Output IP3, Ku-Band