Infineon BSZ068N06NS 30V N-Channel MOSFET: Datasheet, Application Circuit, and Features
The Infineon BSZ068N06NS is a highly efficient N-Channel MOSFET engineered using Infineon's advanced OptiMOS™ power technology. Designed for a maximum drain-source voltage (VDS) of 30V, this component is a benchmark for performance in low-voltage, high-switching-frequency applications. It offers an exceptional blend of low on-state resistance (RDS(on)) and low total gate charge (Qg), making it a superior choice for power management tasks where efficiency and thermal performance are critical.
Key Features and Specifications
A deep dive into the datasheet reveals the core strengths of the BSZ068N06NS. Its standout feature is an ultra-low RDS(on) of just 0.68 mΩ (max) at a gate-source voltage of 10 V. This remarkably low resistance directly translates to minimal conduction losses, allowing the MOSFET to handle high currents with reduced heat generation. The device boasts a continuous drain current (ID) rating of 100 A at a case temperature of 25°C, showcasing its ability to manage significant power in a compact package (PG-TDSON-8).
Furthermore, its low gate charge ensures fast switching speeds, which is paramount for improving efficiency in switch-mode power supplies (SMPS) and motor control circuits. This combination of low RDS(on) and Qg results in an excellent Figure of Merit (FOM), a key indicator of switching performance. The MOSFET is also characterized by its high robustness and avalanche energy rating, ensuring reliability in demanding environments.
Typical Application Circuit
A primary application for the BSZ068N06NS is in synchronous rectification within DC-DC converters, particularly in buck converters for computing and server power supplies. In a typical synchronous buck converter circuit, the BSZ068N06NS is ideally suited for the low-side switch position.
In this configuration:
The high-side switch (another MOSFET) is turned on to deliver current to the inductor and load.
When the high-side switch turns off, the BSZ068N06NS (low-side switch) is activated, providing a very low-resistance path to ground for the inductor current. Its ultra-low RDS(on) is critical here to minimize voltage drop and power loss during the freewheeling phase.
The driver IC controls the switching of both MOSFETs, and the fast switching capability of the BSZ068N06NS ensures clean transitions and reduces dead time, further enhancing overall converter efficiency.
This circuit is fundamental in voltage regulator modules (VRMs) powering modern CPUs and GPUs, where high current and high efficiency at fast switching frequencies are non-negotiable requirements.
Conclusion and Summary by ICGOODFIND
ICGOODFIND: The Infineon BSZ068N06NS sets a high standard for 30V N-Channel MOSFETs, delivering an industry-leading combination of extremely low on-resistance and fast switching performance. Its primary strength lies in maximizing efficiency and power density for a wide range of demanding low-voltage applications, including synchronous rectification in DC-DC power supplies, motor drives, and battery management systems. For designers seeking to minimize losses and improve thermal management, the BSZ068N06NS represents a top-tier component choice.
Keywords: OptiMOS™, Low RDS(on), Synchronous Rectification, DC-DC Converter, Power Efficiency.
