Infineon BSC100N06LS3: High-Performance N-Channel MOSFET for Power Management Applications

The Infineon BSC100N06LS3 is a state-of-the-art N-channel power MOSFET engineered to deliver exceptional performance and reliability in a wide array of power management applications. As a member of Infineon’s renowned OptiMOS™ family, this device is designed using advanced trench technology, which enables extremely low on-state resistance (RDS(on)) combined with superior switching performance. These characteristics make it an ideal solution for enhancing efficiency and power density in modern electronic systems.

A key feature of the BSC100N06LS3 is its low gate charge (Qg) and low effective output capacitance (Coss(eff)), which are critical for minimizing switching losses in high-frequency circuits. This allows designers to push switching frequencies higher, leading to smaller passive components and more compact system designs. With a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of up to 100 A, this MOSFET is robust enough to handle significant power levels in demanding environments such as synchronous rectification in switched-mode power supplies (SMPS), DC-DC converters, and motor control circuits.

The device is also characterized by its high thermal performance and durability, thanks to its low thermal resistance and optimized package design. The BSC100N06LS3 is housed in a PQFN 3.3x3.3 mm² package, which offers an excellent power-to-size ratio and improves heat dissipation, thereby supporting sustained operation under high-load conditions. Furthermore, its avalanche ruggedness ensures enhanced reliability in overvoltage scenarios, providing an added layer of protection in power systems.

In application, the BSC100N06LS3 excels in improving energy efficiency, which is increasingly important in energy-conscious industries including computing, telecommunications, and automotive electronics. Its ability to operate efficiently at high frequencies makes it particularly valuable for applications requiring tight voltage regulation and fast transient response.

ICGOOODFIND:

The Infineon BSC100N06LS3 sets a high standard for power MOSFETs with its optimal balance of low RDS(on), high current capability, and excellent thermal properties, making it a top choice for next-generation power management solutions.

Keywords:

Power MOSFET, Low RDS(on), Switching Performance, Synchronous Rectification, DC-DC Converters.